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| MITSUBISHI SEMICONDUCTOR HIGH-SPEED SWITCHING THYRISTOR CR10CY MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR10CY OUTLINE DRAWING 2 3 14 Dimensions in mm 1 (16.2) 2.0 MIN 10 MAX 19.5 MAX M6x1 1 3 MICA WASHER 32x6xt0.25 SPACER 9x6.2xt1 SOLDERLESS TERMINAL TELEGRAPH WIRE 1.04~2.63mm2 11 MAX 1.9 MIN * IT (AV) ......................................................................... 10A * VDRM ..............................................................400V/600V * IGT ..........................................................................40mA APPLICATION Inverter, DC choppers, DC static switches, pulse generator MAXIMUM RATINGS Symbol VRRM VRSM VDRM VDSM Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage LOCK WASHER M6 BRASS NUT M6x1 1 CATHODE 2 ANODE 3 GATE Note: Mica washer and spacer are provided only upon request. Voltage class 8 400 500 400 500 12 600 720 600 720 26 MAX 8.7 MAX 3 MIN 2 Unit V V V V Symbol IT (RMS) IT (AV) ITSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg -- -- Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mounting torque Weight Typical value Conditions Commercial frequency, sine half wave, 180C conduction, Tc=66C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current VD=1/2VDRM, ITM=30A, IG=0.1A, Tc=25C, f=60Hz Ratings 15.5 10 200 165 100 5.0 0.5 10 5 2 -30 ~ +125 -30 ~ +125 30 2.94 8.8 Unit A A A A2s A/s W W V V A C C kg*cm N*m g Feb.1999 MITSUBISHI SEMICONDUCTOR HIGH-SPEED SWITCHING THYRISTOR CR10CY MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IRRM IDRM VTM dv/dt VGT VGD IGT tgt tq Rth (j-c) Rth (c-f) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Turn-on time Turn-off time Thermal resistance Contact thermal resistance Test conditions Tj=125C, VRRM applied Tj=125C, VDRM applied Tc=25C, ITM=30A, Instantaneous value Tj=125C, VD=2/3VDRM Tj=25C, VD=6V, IT=0.5A Tj=125C, VD=1/2VDRM Tj=25C, VD=6V, IT=0.5A Tj=25C, VD=100V, IT=10A, IG=0.1A IT=10A, VR=50V, VD=1/2VDRM, Tj=125C, dv/dt=20V/s Junction to case Case to fin, greased Limits Min. -- -- -- 100 -- 0.25 -- -- -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 4.0 4.0 2.5 -- 2.5 -- 40 10 15 2.0 0.55 Unit mA mA V V/s V V mA s s C/W C/W PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 1.0 1.5 2.0 RATED SURGE ON-STATE CURRENT 200 SURGE ON-STATE CURRENT (A) 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 ON-STATE CURRENT (A) Tc = 125C Tc = 25C 2.5 3.0 3.5 4.0 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR HIGH-SPEED SWITCHING THYRISTOR CR10CY MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) GATE CHARACTERISTICS VFGM = 10V PGM = 5W 101 7 5 VGT = 2.5V PG(AV) = 3 2 0.5W IGT 100 IFGM = Tj = 125C 7 2A 25C 5 30C 3 2 VGD = 0.25V 10-1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) 3 2 TRANSIENT THERMAL IMPEDANCE (C/W) 10-1 2 3 5 7 100 2.4 2.0 1.6 1.2 0.8 0.4 0 10-4 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 TIME (s) GATE VOLTAGE (V) AVERAGE POWER DISSIPATION (W) CASE TEMPERATURE (C) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 40 120 90 35 180 60 30 = 30 25 20 15 10 5 0 0 2 4 6 8 360 RESISTIVE, INDUCTIVE LOADS 10 12 14 16 ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 140 120 100 80 60 40 20 0 0 2 4 6 8 10 12 14 16 = 30 60 90 120 180 360 RESISTIVE, INDUCTIVE LOADS AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) AVERAGE POWER DISSIPATION (W) AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 NATURAL CONVECTION 140 120 100 80 = 180 60 = 90 160 160 t4 40 120 120 t3 ALUMINUM PLATE 20 PAINTED BLACK AND GREASED 0 012345 360 RESISTIVE, INDUCTIVE LOADS MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 120 360 90 RESISTIVE 60 LOADS = 30 180 6 7 8 9 10 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR HIGH-SPEED SWITCHING THYRISTOR CR10CY MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 CASE TEMPERATURE (C) 140 120 100 80 60 40 20 0 0 2 4 6 8 10 12 14 16 = 30 60 90 120 180 AMBIENT TEMPERATURE (C) 360 RESISTIVE LOADS ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 160 160 t4 120 120 t3 140 ALUMINUM PLATE PAINTED BLACK 360 120 AND GREASED RESISTIVE 100 LOADS NATURAL 80 CONVECTION = 180 60 90 40 20 0 0 2 4 6 8 10 12 14 16 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) AVERAGE POWER DISSIPATION (W) CASE TEMPERATURE (C) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 40 RESISTIVE, INDUCTIVE 35 LOADS DC 360 30 270 180 25 120 90 20 60 = 30 15 10 5 0 0 2 4 6 8 10 12 14 16 ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 140 120 100 80 60 40 20 0 0 2 4 6 8 10 12 14 16 = 30 60 90 180 270 DC 120 360 RESISTIVE, INDUCTIVE LOADS AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) AMBIENT TEMPERATURE (C) TURN-OFF TIME (Tj=tC) TURN-OFF TIME (Tj=125C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 160 160 t4 120 120 t3 140 ALUMINUM PLATE PAINTED BLACK 360 120 AND GREASED RESISTIVE, 100 INDUCTIVE 80 DC 60 = 180 90 40 20 0 0 2 4 6 8 10 12 14 16 LOADS NATURAL CONVECTION TURN-OFF TIME VS. JUNCTION TEMPERATURE 100 (%) 100 90 80 70 60 50 40 30 20 10 0 0 20 IT = 10A, tw = 100s di/dt = -8A/s VR = 50V, VD = 1/2VDRM dv/dt = 20V/s 40 60 80 100 120 140 160 TYPICAL EXAMPLE AVERAGE ON-STATE CURRENT (A) JUNCTION TEMPERATURE (C) Feb.1999 MITSUBISHI SEMICONDUCTOR HIGH-SPEED SWITCHING THYRISTOR CR10CY MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE TURN-OFF TIME VS. ON-STATE CURRENT 160 100 (%) 140 120 TYPICAL EXAMPLE TURN-OFF TIME (IT = iA ) TURN-OFF TIME (IT = 10A ) 100 80 60 40 20 0 0 2 Tj = 125C tw = 100s di/dt = -8A/s VR = 50V, VD = 1/2VDRM dv/dt = 20V/s 4 6 8 10 12 14 16 ON-STATE CURRENT (A) Feb.1999 |
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